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FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FPAB30BH60 rev. c1 april 2013 FPAB30BH60 pfc spm ? 3 series for 1-phase boost pfc features ? low thermal resistance thanks to al 2 o 3 -dbc substrate ? 600 v - 30 a 1-phase boost pfc including a drive ic for gate driving and protection ? built-in ntc thermistor for monitoring over- temperature ? typical switching frequency of 20 khz ? isolation rating of 2500 vrms/min. applications 1-phase boost pfc converter for air conditioner general description FPAB30BH60 is a pfc spm 3 series for 1-phase boost pfc (power factor co rrection) that fairchild has newly developed for mid-power applications such as air conditioners. it combines optimized circuit protections and a drive ic matched to high frequency switching igbt. the system reliability is further enhanced by the integrated under-volt- age lock-out and over-current protection func- tion. related source ? will be released fig. 1. package overview package marking & ordering information device marking device package packing type reel size tape width quantity FPAB30BH60 FPAB30BH60 spmia-027 rail - - 10
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com FPAB30BH60 rev. c1 integrated power functions ? pfc converter for single-phase ac/dc power conversion (please refer to fig. 3) integrated drive, protecti on and system control functions ? for igbts : gate drive circuit, over current(oc) protection, control supply circuit under-voltage(uv) protection ? fault signal : corresponding to oc and uv fault ? built-in thermistor: over-temperature monitoring ? input interface : active-high interface, can work with 3.3 / 5 v logic, schmitt trigger input pin configuration fig. 2. 12.205 18.345 (1)v cc (2)com (3)com (4)com (5)in (6)v fo (7)c fod (8)c sc (9)r th (10)v th (11)n.c (12)n.c (13)n (14)n (15)n (16)n (17)nr (18)nr (19)nr (20)nr (21)p (22)p (23)n.c (24)l (25)pr (26)r (27)s dbc substrate case temperature (t c ) detecting point top view 12.205 18.345 (1)v cc (2)com (3)com (4)com (5)in (6)v fo (7)c fod (8)c sc (9)r th (10)v th (11)n.c (12)n.c (13)n (14)n (15)n (16)n (17)nr (18)nr (19)nr (20)nr (21)p (22)p (23)n.c (24)l (25)pr (26)r (27)s dbc substrate case temperature (t c ) detecting point top view
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com FPAB30BH60 rev. c1 pin descriptions * 11th and 12th pins are cut. please refer to package outline drawings for more detail. internal equivalent circ uit and input/output pins fig. 3. pin number pin name pin description 1v cc common bias voltage for ic and igbts driving 2,3,4 com common supply ground 5in (r) signal input for low-side r-phase igbt 6v fo fault output 7c fod capacitor for fault output duration time selection 8c sc capacitor (low-pass filter) for over current detection 9r (th) ntc thermistor terminal 10 v (th) ntc thermistor terminal 11,12 n.c no connection* 13~16 n igbt emitter 17~20 n r negative dc-link of rectifier 21,22 p positive rail of dc?link 23 n.c no connection 24 l reactor connection pin 25 p r positive dc?link of rectifier 26 r ac input for r-phase 27 s ac input for s-phase csc cfod vfo in(s) com vcc out v th r th c sc c fod v fo in com vcc p s r n r ntc thermistor p r l n
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com FPAB30BH60 rev. c1 absolute maximum ratings (t j = 25c, unless otherwise specified) converter part note 1. the maximum junction temperature rating of the power chips integrated within the pfc spm ? product is 150 ? c(@t c ? 100 ? c). however, to insure safe operation of the pfc spm product, the average junction temperature should be limited to t j(ave) ? 125 ? c (@t c ? 100 ? c) control part total system thermal resistance note : 2. for the measurement point of case temperature(t c ), please refer to fig. 2. item symbol condition rating unit supply voltage v i applied between r-s 264 v rms supply voltage (surge) v i(surge) applied between r-s 500 v output voltage v pn applied between p- n 450 v output voltage (surge) v pn(surge) applied between p- n 500 v collector-emitter voltage v ces 600 v peak forward surge current i fsm single half sine-wave 250 a input current (100% load) i i t c < 95c, v i = 220 v, v pn = 390 v, v pwm = 20 khz 25 a input current (125% load) i i(125%) t c < 95c, v i = 220 v, v pn = 390 v, v pwm = 20 khz, 1 min non-repetitive 30 a collector dissipation p c t c = 25c per one igbt 169 w operating junction temperature t j (note 1) -20 ~ 150 c item symbol condition rating unit control supply voltage v cc applied between v cc - com 20 v input signal voltage v in applied between in - com -0.3~5.5 v fault output supply voltage v fo applied between v fo - com -0.3~v cc +0.3 v fault output current i fo sink current at v fo pin 5 ma current sensing input voltage v sc applied between c sc - com -0.3~v cc +0.3 v item symbol condition rating unit module case operation temperature t c -20 ~ 100 c storage temperature t stg -40 ~ 125 c isolation voltage v iso 60 hz, sinusoidal, ac 1 minute, connection pins to dbc 2500 v rms item symbol condition min. typ. max. unit junction to case thermal resistance (referenced to pkg center) r ? (j-c)q igbt - - 0.74 c/w r ? (j-c)f frd - - 1.44 c/w r ? (j-c)r rectifier - - 2.07 c/w
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com FPAB30BH60 rev. c1 electrical characteristics (t j = 25c, unless otherwise specified) converter part note 3. t on and t off include the propagation delay time of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see fig. 4 control part note 4. the fault-out pulse width t fod depends on the capacitance value of c fod according to the following approximate equation : c fod = 18.3 x 10 -6 x t fod [f] item symbol condition min. typ. max. unit igbt saturation voltage v ce(sat) v cc = 15 v, v in = 5 v; i c = 30 a - 2.0 2.8 v frd forward voltage v ff i f = 30 a - 1.8 2.5 v rectifier forward voltage v fr i f = 30 a - 1.2 1.5 v switching times t on v pn = 400 v, v cc = 15 v, i c = 30 a v in = 0 v ? 5 v, inductive load (note 3) - 650 - ns t c(on) - 400 - ns t off - 620 - ns t c(off) - 200 - ns t rr -60-ns i rr -3.5-a collector - emitter leakage current i ces v ce = v ces --250 ? a item symbol condition min. typ. max. unit quiescent v cc supply cur- rent i qccl v cc = 15 v, in = 0 v v cc - com - - 26 ma fault output voltage v foh v sc = 0 v, v fo circuit: 4.7 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 4.7 k ? to 5 v pull-up - - 0.8 v over current trip level v sc(ref) v cc = 15 v 0.45 0.5 0.55 v supply circuit under- voltage protection uv ccd detection level 10.7 11.9 13.0 v uv ccr reset level 11.2 12.4 13.2 v fault-out pulse width t fod c fod = 33 nf (note 4) 1.4 1.8 2.0 ms on threshold voltage v in(on) applied between in - com 2.8 - - v off threshold voltage v in(off) --0.8v resistance of thermistor r th @ t c = 25c (note fig. 9) - 50 - k ? @ t c = 100c (note fig. 9) - 2.99 - k ?
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com FPAB30BH60 rev. c1 electrical characteristics fig. 4. switching time definition mechanical characteristics and ratings fig. 5. flatness measurement position item condition limits units min. typ. max. mounting torque mounting screw: m3 recommended 0.62 n?m 0.51 0.62 0.72 n?m device flatness note fig. 5 0 - +120 ? m weight -15.00- g t on t c(on) t rr i rr 10% of i c 100% of i c 90% of i c 120% of i c 15% of v ce (a) turn-on t off t c(off) (b) turn-off i c v ce v ce i c v in v in 15% of v ce 10% of i c (+) (+) (+)
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com FPAB30BH60 rev. c1 time charts of spms protective function p1 : normal operation - igbt on and conducting current p2 : under voltage detection p3 : igbt gate interrupt p4 : fault signal generation p5 : under voltage reset p6 : normal operation - igbt on and conducting current fig. 6. under-voltage protection p1 : normal operation - igbt on and conducting current p2 : over current detection p3 : igbt gate interrupt / fault signal generation p4 : igbt is slowly turned off p5 : igbt off signal p6 : igbt on signal - but igbt cannot be turned on during the fault output activation p7 : igbt off state p8 : fault output reset and normal operation start fig. 7. over current protection internal ig b t g ate-e m itter v oltage input signal output current fault output signal control supply voltage p1 p2 p3 p4 p6 p5 uv detect uv reset inte rn al ig b t gate-em itter voltage inp ut s ig nal o utp ut c u rre nt sensing voltage fault output signal p1 p2 p3 p4 p6 p5 p7 p8 o c r eference voltage (0.5v) rc filter delay oc detection
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com FPAB30BH60 rev. c1 fig. 8. application example r-t graph 0 20 40 60 80 100 120 20 30 40 50 60 70 80 90 100 110 120 130 temperature [ ? c] resistance [k ? ] fig. 9. r-t curve of the built-in thermistor
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 9 www.fairchildsemi.com FPAB30BH60 rev. c1 detailed package outline drawings
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 10 www.fairchildsemi.com FPAB30BH60 rev. c1 detailed package outline drawings
FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc ?2008 fairchild semiconductor corporation 11 www.fairchildsemi.com FPAB30BH60 rev. c1 detailed package outline drawings
?2008 fairchild semiconductor corporation 12 www.fairchildsemi.com FPAB30BH60 rev. c1 FPAB30BH60 pfc spm? 3 series for 1-phase boost pfc

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